onsemi has announced the launch of the Elite Pairing Studio, an industry-first online design environment that simplifies the pairing of silicon carbide (SiC) MOSFETs and gate drivers for demanding power electronics applications. This includes AI data centers, electric vehicles, and industrial systems. The tool provides engineers with visibility into device-level behavior and pairing trade-offs, enabling earlier and better-informed engineering decisions while reducing design iterations.
Streamlining Power Design
The Elite Pairing Studio serves as the front door to onsemi's broader suite of design tools, offering a seamless path to system-level evaluation of performance, efficiency, and thermal behavior. By analyzing device combinations and recommending well-matched SiC MOSFET and gate driver pairings based on specific system requirements, the online tool accelerates development. It allows engineers to evaluate device-level switching behavior, losses, and trade-offs early in the design process, reducing iterations before advancing to full system-level analysis.
Interactive Simulation Environment
The interactive, personalized simulation environment gives engineers visibility into timing, waveform behavior, and the trade-offs behind each recommended pairing. Additional onsemi technologies are expected to be added to the Elite Pairing Studio in the future. This cloud-based environment provides a private and secure workspace on onsemi.com, where engineers can explore device combinations using an intuitive workflow based on their inputs.
The tool evaluates a wide range of gate driver combinations with the selected SiC MOSFET, using transparent methods based on established industry equations and real-world performance calculations. The evaluation logic is clear and inspectable for users, ensuring confidence in the recommendations.
Why This Matters
As power electronics grow more complex, engineers must carefully match gate drivers with switching devices to achieve optimal efficiency, minimize losses, and ensure safe operating temperatures. Early component selection decisions directly impact system-level outcomes, especially as teams balance competing requirements. Traditionally, this process required time-consuming manual evaluation and simulation via extensive datasheet comparisons, spreadsheet analysis, and empirical testing.
The onsemi Elite Pairing Studio simplifies this challenge by guiding engineers through a step-by-step process to identify the ideal combination of an onsemi gate driver and SiC MOSFET based on their requirements. Well-matched pairings can be compared quickly, helping reduce iterations and refine power architectures earlier in the development process. This reduces design risk, shortens time to market, and helps ensure systems perform as intended in real-world conditions.
