onsemi has announced the launch of GaNEXUS, a new gallium nitride (GaN) power portfolio designed to deliver higher efficiency, greater power density, and improved thermal performance. The portfolio targets applications in AI data centers, industrial automation, robotics, and energy infrastructure.
Initial Portfolio and Sampling
The initial GaNEXUS portfolio includes FETs sampling across voltage ranges from 40V to 650V, as well as 650V GaNEXUS Smart GaN FETs with integrated protection features. These devices simplify system integration and improve reliability.
Key Features
- Faster switching speeds and lower switching losses
- Higher power density and improved thermal performance
- Integrated protection in Smart variants
When combined with onsemi's Treo Platform for integrated sensing, control, protection, and power management, GaNEXUS enables smarter, more reliable system-level power solutions.
Market Significance
AI data centers are expected to consume up to 9% of U.S. electricity generation by 2030, with power and cooling costs accounting for up to 40% of operating expenses. GaNEXUS addresses these challenges by allowing designers to reduce magnetics and cooling system sizes while improving efficiency and lowering costs.
The addition of GaNEXUS to onsemi's intelligent power portfolio expands the company's ability to deliver optimized solutions across voltage domains and performance requirements, offering customers flexibility to optimize efficiency, thermal performance, system size, and total cost.
